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Single Dot

In order to determine a realistic, yet simple, set of approximations, consider the simple case of a single quantum dot where only one relevant level for each spin direction will be taken into account. Any lower levels are assumed to be permanently occupied and higher energy levels are always empty. The two relevant states in the dot are labelled by the electron spin quantum numbers tex2html_wrap_inline1152 or tex2html_wrap_inline1154. A tight binding Hamiltonian will be used with a Hubbard term U describing the Coulomb interaction between the spin up and spin down electrons. This is analogous to the Anderson model of localised impurity states in metals [14].
 equation84
where tex2html_wrap_inline1158 and tex2html_wrap_inline1160 are the single particle energy levels in the dot and reservoirs respectively. Transport between dot and reservoir proceeds by means of the hopping potential tex2html_wrap_inline1162. Any interaction that might take place with electrons in the full lower energy levels is incorporated in the definition of tex2html_wrap_inline1158. The hopping potentials tex2html_wrap_inline1162 are taken to be real, because of the time-reversal symmetry. It is required that any set of approximations yields the correct solution in the limit of zero bandwidth, i.e. negligible hopping potential. Moreover, the single particle density of states integrated over all energies must equal unity. The density of states must be non-negative at all energies. Finally, the solution should display electron-hole symmetry. It should be invariant under the transformation tex2html_wrap_inline1168.

The crudest set of approximations (scheme 1) consistent with these conditions [15] corresponds to the Hartree approximation scheme [16] where electrons of opposite spin do not interact directly, but only through a modified average potential field. The resulting Green's function is
 equation113
with
 equation126
where tex2html_wrap_inline1170. tex2html_wrap_inline1172 is the self-energy due to the tunnelling of the tex2html_wrap_inline1152 electron and tex2html_wrap_inline1176 is the average occupancy of the opposite spin state. The same Green's function results from the method as indicated by Caroli, Combescot and Nozieres [17], where the full Green's function is calculated as a perturbation of the system without transmission to either reservoir. The occupation is the integrated product of the (diagonal) distribution function and the local density of states in the dot. Since the Green's function is related to the density of states which in turn depends on the average occupation number, it means that equation 7 is to be solved self-consistently. It can be shown that the integrated density of states equals unity, subject to the condition tex2html_wrap_inline1178, which is obviously satisfied in any real system.

A better approximation scheme (scheme 2) is one which neglects the simultaneous tunnelling of the electron of opposite spin, but which does not decouple the higher order Green's functions as in approximation scheme 1. This yields the following Green's function:
 equation140
As the tunnelling of the opposite spin electron is not taken into account, its creation and annihilation operators are always paired together in the higher order Green's functions. The operators for both spins do not truly intermingle, which results in the probabilistic expression for the Green's function. Therefore, the same expression can be obtained by solving the Green's function for the isolated site and adding an imaginary part to the site energy to include the reservoirs, i.e. the reservoirs simply serve as a source of broadening.

A more accurate method (scheme 3) only neglects terms involving correlation in the leads, valid for temperatures higher than the Kondo temperature [16]. The Green's function corresponding to these approximations is [3]
eqnarray154
The self-energies due to the tunnelling of the tex2html_wrap_inline1154 electron are defined as
 equation176
where tex2html_wrap_inline1182, tex2html_wrap_inline1184 and tex2html_wrap_inline1186. As for scheme 2, it can be shown that the density of states integrates to unity for all values of tex2html_wrap_inline1188.

Since the couplings to the reservoirs differ by a constant factor the distribution matrix reduces to a diagonal matrix.
equation194
As there is only one level for each spin the current expression 4 takes an especially simple form where the current is proportional to the density of states between the Fermi levels of the reservoirs.
 equation200
The Ohmic conductance is given by the integrated product of the density of states and the derivative of the Fermi function. At low temperatures the derivative of the Fermi function approximates a tex2html_wrap_inline1190-function. A Lorentzian density of states with its broadening caused solely by tunnelling to and from the reservoirs thus gives rise to a conductance peak of height tex2html_wrap_inline1192, provided that the dot is symmetrically coupled to the reservoirs.

The three approximation schemes are compared in figures 1- 3 for the case where the temperature equals the broadening due to the reservoirs. In order to distinguish between the electrons in the dot, a magnetic field is applied giving rise to a Zeeman splitting of the energy levels (tex2html_wrap_inline1194).

Figure 1 shows the current and the associated differential conductance through the dot when a bias voltage is applied across it, keeping the chemical potential in the right reservoir fixed (tex2html_wrap_inline1196). All three approximation schemes yield qualitatively the same results, although scheme 3 (and scheme 2 to a lesser extent) has a larger associated broadening. This is a direct consequence of the fact that scheme 3 takes the tunnelling of the oppositely charged electron into account.

In figure 2 the Ohmic conductance is plotted. The approximation schemes give identical solutions for the shape and height of the major conductance peaks, but especially approximation scheme 1 gives a different result for the amplitude of the minor peaks. Moreover, an investigation of the occupation plot 3 shows that for scheme 1 the average occupation of the higher energy spin state can exceed that of the other spin state for intermediate values of the chemical potential of the reservoirs. This is clearly unphysical. Both these observations justify the conclusion that scheme 1 should be dismissed as a good set of approximations.

As expected the conductance plot shows peaks at the single particle energy levels and at the same energies displaced by U. It is clear that two peaks are suppressed, which can be explained as follows. The first peak occurs when transport takes place through the lowest level tex2html_wrap_inline1158. As the chemical potential in the reservoirs is raised, the state tex2html_wrap_inline1158 will start to fill up. When the chemical potential lines up with tex2html_wrap_inline1204, level tex2html_wrap_inline1158 will be mostly occupied (see figure 3) thus putting the Coulomb blockade in place and impeding the flow of electrons through level tex2html_wrap_inline1204. This results in a highly suppressed conductance peak. Because of the electron-hole symmetry a similar situation occurs at much higher values of the chemical potential.

Approximation schemes 2 and 3 seem to give results which are closely in accordance with each other. The main difference is that approximation scheme 3 produces a larger associated broadening. Although slightly better, scheme 3 is harder to manipulate numerically, whereas scheme 2 is much more stable. Therefore approximation scheme 2 will be employed here.


next up previous
Next: Two dots Up: Coherent tunnelling through two Previous: Method

Angus MacKinnon - Aonghus Mac Fhionghuin Fri Nov 8 17:44:15 gmt 1996